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pelelas silikon kordibe in zambia

[IEEE 2004 International Symposium on Electromagnetic

doi:10.1109/isemc.2004.1349886Jeffrey, I.LoVetri, J.Kordi, B

Studies on fracture and strength of photovoltaic silicon

Structures II 1991, 993-994, 1991-08-01Kordisch, HSummaries of Technical Papers of Meeting Architectural Institute of Japan Structures II

The origin of cubic polytype inclusions in CVD-grown

AO KonstantinovC HallinB PetzO KordinaE JanzenInternational Symposium on Compound Semiconductors

Effect of surface stoichiometry on nucleation and growth of

AO KonstantinovC HallinO KordinaE JanzenInternational Conference on Silicon Carbide Related Materials

SILICON CARBIDE SCHOTTKY DIODES AND FABRICATION METHOD

SILICON CARBIDE SCHOTTKY DIODES AND FABRICATION METHODOlof Claes Erik KORDINA

Reduction of breakage losses in silicon-cell processing

From these elementary facts it can be concluded,be considered: The prevention of formation or Beinert, JKübler, RKordisch, HKönczöl,

High resolution XRD study of silicon carbide CVD growth

AS BakinC HallinO KordinaE JanzenInternational Conference on Silicon Carbide Related Materials

VSi based vector-magnetometry in 4H-Silicon Carbide - status

Niethammer, MatthiasWidmann, MatthiasLee, SangYunStenberg, PontusKordina, OlleOhshima, TakeshiSon, NguyenJanzen, ErikWrachtrup, J

Gas-Phase Modeling of Chlorine-Based Chemical Vapor

The Cl/Si ratio is demonstrated to be crucial not only for the preventionLeone, S., Kordina, O., Henry, A., Nishizawa, S., Danielsson, O

Silicon Carbide — The power device for the future

Kordina, OInternational Workshop on Thermal Investigations of Ics SystemsE JANZEN ET AL.: Silicon Carbide The power device for the future, THERMAL

Silicon carbide crystal growth in a CVD reactor using

A CVD reactor chamber for use in processing the method.Janzén, ErikKordina, Olof

Time-resolved decay of the blue emission in porous silicon

electrochemical method, the decay time is shown to be extremely fast (τ=Harris, C., Syv¨aj¨arvi, M., Bergman, J., Kordina, O., Henry,

Fast chemical sensing with metal-insulator silicon carbide

IEEE Electron Device LettersTobias, P.Baranzahi, A.Spetz, A.L.Kordina, O.Janzen, E.Lundstrom, I

Effect of vapor composition on polytype homogeneity of

Hallin, O. Kordina, and E. Janzé,n,  Effect of vapor composition on polytype homogeneity of epitaxial silicon carbide,  J. Appl. Phys. ,

Silicon carbide Schottky diodes and fabrication method

A semiconductor device and method of formation wherein a disjointed termination layer b102 /bis formed around a Schottky metal region b110. /

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